摘要 |
A field effect transistor (FET) includes source and drain electrodes, a channel layer, a barrier layer over the channel layer, a passivation layer covering the barrier layer for passivating the barrier layer, a gate electrode extending through the barrier layer and the passivation layer, and a gate dielectric surrounding a portion of the gate electrode that extends through the barrier layer and the passivation layer, wherein the passivation layer is a first material and the gate dielectric is a second material, and the first material is different than the second material. |
申请人 |
HRL LABORATORIES, LLC;CORRION, ANDREA;BOUTROS, KARIM S.;CHEN, MARY Y.;KIM, SAMUEL J.;CHU, RONGMING;BURNHAM, SHAWN D. |
发明人 |
CORRION, ANDREA;BOUTROS, KARIM S.;CHEN, MARY Y.;KIM, SAMUEL J.;CHU, RONGMING;BURNHAM, SHAWN D. |