Composition for forming resist underlayer film and patterning process using the same

摘要

The invention provides a composition for forming a silicon-containing resist underlayer film comprising:
(A) a silicon-containing compound obtained by a hydrolysis-condensation reaction of a mixture containing, at least, one or more hydrolysable silicon compound shown by the following general formula (1) and one or more hydrolysable compound shown by the following general formula (2), and (B) a silicon-containing compound obtained by a hydrolysis-condensation reaction of a mixture containing, at least, one or more hydrolysable silicon compound shown by the following general formula (3) and one or more hydrolysable silicon compound shown by the following general formula (4). There can be provided a composition for forming a resist underlayer film applicable not only to a resist pattern obtained in a negative development but also to a resist pattern obtained in a conventional positive development, and a patterning process using this composition.
€ƒ€ƒ€ƒ€ƒ€ƒ€ƒ€ƒ€ƒ R 1 m1 R 2 m2 R 3 m3 Si(OR) (4-m1-m2-m3) €ƒ€ƒ€ƒ€ƒ€ƒ(1)
€ƒ€ƒ€ƒ€ƒ€ƒ€ƒ€ƒ€ƒ U(OR 4 ) m4 (OR 5 ) m5 €ƒ€ƒ€ƒ€ƒ€ƒ(2)
€ƒ€ƒ€ƒ€ƒ€ƒ€ƒ€ƒ€ƒ R 6 m6 R 7 m7 R 8 m8 Si(OR 9 ) (4-m6-m7-m8 )€ƒ€ƒ€ƒ€ƒ€ƒ(3)
€ƒ€ƒ€ƒ€ƒ€ƒ€ƒ€ƒ€ƒ Si(OR 10 ) 4 €ƒ€ƒ€ƒ€ƒ€ƒ(4)