| 摘要 |
PURPOSE: A wafer manufacturing method is provided to control warpage or twisting of an epitaxial wafer, thereby obtaining a high quality wafer. CONSTITUTION: An epi layer is grown on the surface of a wafer at a growth temperature(ST100). The wafer is firstly cooled after the epi layer is grown(ST200). The wafer is annealed(ST300). The wafer is secondly cooled(ST400). The annealing process is performed at the growth temperature or a lower temperature. The temperature of the annealing process is 800 to 1800°C. [Reference numerals] (ST100) Step of growing an epic layer; (ST200) Step of first cooling; (ST300) Step of annealing; (ST400) Step of second cooling
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