| 摘要 |
<p>The present invention discloses a power amplifier tube and a power amplification method, wherein, the power amplifier tube includes a High Voltage Heterojunction Bipolar Transistor (HVHBT) power amplifier die and a Lateral Double-Diffused Metal-Oxide Semiconductor (LDMOS) power amplifier die, and the HVHBT power amplifier die and the LDMOS power amplifier die are integrated in the same package. The present invention is applied to a Doherty amplifier, which designs a power tube by using a breakthrough new power amplifier die combination, and can achieve high efficient power amplification on the basis of ensuring a small volume of the power amplifier tube, compared with the existing Doherty amplifiers each of which uses the LDMOS power amplifier die.</p> |
