发明名称 |
SEMICONDUCTOR DEVICE AND PRODUCTION METHOD THEREFOR |
摘要 |
In order to improve characteristics of an IGBT, particularly, to reduce steady loss, turn-off time and turn-off loss, a thickness of a surface semiconductor layer is set to about 20 nm to 100 nm in an IGBT including: a base layer; a buried insulating film provided with an opening part; the surface semiconductor layer connected to the base layer below the opening part; a p type channel forming layer formed in the surface semiconductor layer; an n + type source layer; a p + type emitter layer; a gate electrode formed over the surface semiconductor layer via a gate insulating film; an n + type buffer layer; and a p type collector layer. |
申请公布号 |
EP2541604(A1) |
申请公布日期 |
2013.01.02 |
申请号 |
EP20100846515 |
申请日期 |
2010.02.25 |
申请人 |
RENESAS ELECTRONICS CORPORATION |
发明人 |
ARAI, DAISUKE;NAKAZAWA, YOSHITO;HOSOYA, NORIO |
分类号 |
H01L29/739;H01L21/336;H01L29/06;H01L29/12;H01L29/40;H01L29/66;H01L29/78;H01L29/786 |
主分类号 |
H01L29/739 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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