NITRIDE SEMICONDUCTOR LIGHT-EMITTING DEVICE AND MANUFACTURING METHOD THEREOF

摘要

PURPOSE: A nitride semiconductor light emitting diode is provided to improve brightness by forming a large effective emission area. CONSTITUTION: A first clad layer is made of a first conductivity type semiconductor material. The first conductivity type semiconductor material is successively formed on a substrate. A second clad layer includes an active layer of a multi quantum well structure and a second conductivity semiconductor material. One p-electrode pad(251) is positioned in one end of the second clad layer. One n-electrode pad(261) faces the p-electrode pad of the first clad layer.