| 摘要 |
A semiconductor device, including: a semiconductor body (2); a trench (22) having side walls (22a, 22b) and a bottom; a gate region (14) made of conductive material, extending within the trench; an insulating region (60), extending along bottom portions of the side walls of the trench and on the bottom of the trench; a gate insulating layer (52), extending along top portions of the side walls of the trench, laterally with respect to the gate region; a conductive region (24), extending within the trench, surrounded at the top and laterally by the gate region and surrounded at the bottom and laterally by the insulating region; and a field insulating layer (54), arranged between the gate region and the conductive region. The gate insulating layer is radiused to the insulating region by means of gate-radiusing thickened portions (70a, 70b), each of which has a thickness that increases as the depth increases. The field insulating layer is radiused to the insulating region by means of field-radiusing thickened portions (72a, 72b), each of which has a thickness that increases as the depth increases. |
