| 发明名称 |
Structure and method for manufacturing interconnect structures having self-aligned dielectric caps |
| 摘要 |
Interconnect structures having self-aligned dielectric caps are provided. At least one metallization level is formed on a substrate. A dielectric cap is selectively deposited on the metallization level. |
| 申请公布号 |
GB201220842(D0) |
申请公布日期 |
2013.01.02 |
| 申请号 |
GB20120020842 |
申请日期 |
2012.11.20 |
| 申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
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