THIN FILM TRANSISTOR, DISPLAY PANEL HAVING THE SAME, METHOD OF MANUFACTURING THE SAME

摘要

PURPOSE: A thin film transistor, a display panel having the same, a method for manufacturing the same are provided to omit an etching process for patterning a semiconductor layer after the semiconductor layer is formed and to prevent the deterioration of a semiconductor layer. CONSTITUTION: A first insulating layer(113) is formed on a base electrode. A source electrode and a drain electrode are formed on a first insulating layer and a source electrode. A semiconductor layer(114) is formed on the source electrode, the drain electrode and the first insulating layer. A second insulating layer(115) is formed on the semiconductor layer. A gate electrode(GE) is overlapped with the source electrode and drain electrode and formed on the second insulating layer.