Asymetric bottom contacted 2D layer devices

摘要

The invention provides a Bottom Contacted 2D-layer Device (BCD) for the determination of graphene doping and chemical sensing. The device can be made by transfer of high quality CVD grown graphene films onto n- or p-doped silicon substrates yielding Schottky barrier diodes. Exposure to liquids and gases change the charge carrier density in the graphene and as a result the electrical transport of the device is modulated. The changes can be easily detected and interpreted in the doping power of the adsorbent. This principle allows one to create a new type of chemical sensor platform exploiting the monolayer nature of graphene or other carbon material. The device benefits from facile fabrication and the result is a robust device which can investigate surface chemistry on monolayer materials.