| 摘要 |
<p>Disclosed is a thin-film photoelectric conversion device including a crystalline germanium photoelectric conversion layer, which has an improved open circuit voltage, an improved fill factor, and an improved photoelectric conversion efficiency for light having a longer wavelength. The photoelectric conversion device comprises a first electrode layer, one or more photoelectric conversion units, and a second electrode layer sequentially stacked on a substrate, wherein each of the photoelectric conversion units comprises a p-type semiconductor layer, an n-type semiconductor layer, and a photoelectric conversion layer arranged between the p-type semiconductor layer and the n-type semiconductor layer. A photoelectric conversion layer in at least one of the photoelectric conversion units is a crystalline germanium photoelectric conversion layer comprising a crystalline germanium semiconductor that is substantially intrinsic or weak n-type and is essentially free of silicon atom. A first interface layer which is a substantially intrinsic amorphous silicon semiconductor layer is arranged between the p-type semiconductor layer and the crystalline germanium photoelectric conversion layer.</p> |
