| 摘要 |
[Object] Provided is a solar cell achieving an increased open circuit voltage without relying on suppression of recombination on crystalline silicon. [Solving Means] Solar cell 10 includes crystalline Si layer 50 including a pn junction and semiconductor layer 60 formed on first main surface 50as of crystalline Si layer 50. Semiconductor layer 60 has the same conductivity as a portion of crystalline Si layer 50 that is in contact with semiconductor layer 60. The open circuit voltage under light irradiation onto the solar cell is different from a level difference between the quasi Fermi level of electrons and the quasi Fermi level of holes in crystalline Si layer 50.
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