发明名称 |
Group III nitride semiconductor manufacturing system |
摘要 |
The invention provides a group III nitride semiconductor manufacturing system which is free from interruption to rotation of a rotational shaft. The group III nitride semiconductor manufacturing system has a reacting vessel having an opening, a crucible disposed in an interior of the reaction vessel and containing a melt including at least a group III metal and an alkali metal, a holding unit supporting the crucible and having a rotational shaft extending from the interior of the reaction vessel to an exterior of the reaction vessel through the opening, a rotational shaft cover covering a part of the rotational shaft positioned at the exterior of the reacting vessel and connected to the reacting vessel at the opening, a rotational driving unit disposed at an outside of the reacting vessel and regulating the rotational shaft and a supply pipe connected to the rotational shaft cover and supplying a gas including at least nitrogen into a gap between the rotational shaft and the rotational shaft cover, wherein the gas and the melt react to grow a group III nitride semiconductor crystal.
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申请公布号 |
US8343239(B2) |
申请公布日期 |
2013.01.01 |
申请号 |
US20080289257 |
申请日期 |
2008.10.23 |
申请人 |
TOYODA GOSEI CO., LTD.;YAMAZAKI SHIRO;HIRATA KOJI |
发明人 |
YAMAZAKI SHIRO;HIRATA KOJI |
分类号 |
H01L21/02;C30B9/00;C30B35/00;H01L33/32 |
主分类号 |
H01L21/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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