| 发明名称 |
Enhancement mode gallium nitride power devices |
| 摘要 |
Enhancement mode III-nitride devices are described. The 2DEG is depleted in the gate region so that the device is unable to conduct current when no bias is applied at the gate. Both gallium face and nitride face devices formed as enhancement mode devices.
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| 申请公布号 |
US8344424(B2) |
申请公布日期 |
2013.01.01 |
| 申请号 |
US201213406723 |
申请日期 |
2012.02.28 |
| 申请人 |
TRANSPHORM INC.;SUH CHANG SOO;MISHRA UMESH |
发明人 |
SUH CHANG SOO;MISHRA UMESH |
| 分类号 |
H01L29/66 |
主分类号 |
H01L29/66 |
| 代理机构 |
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代理人 |
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