发明名称 |
Semiconductor device with buried bit lines and method for fabricating the same |
摘要 |
A semiconductor device includes: a semiconductor substrate configured to include a plurality of trenches therein; a plurality of buried bit lines each configured to fill a portion of each trench; a plurality of active pillars each formed in an upper portion of each buried bit line; a plurality of vertical gates each configured to surround each active pillar; and a plurality of word lines configured to couple neighboring vertical gates with each other.
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申请公布号 |
US8344450(B2) |
申请公布日期 |
2013.01.01 |
申请号 |
US201213541213 |
申请日期 |
2012.07.03 |
申请人 |
HYNIX SEMICONDUCTOR INC.;KIM SU-YOUNG |
发明人 |
KIM SU-YOUNG |
分类号 |
H01L29/94 |
主分类号 |
H01L29/94 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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