发明名称 Semiconductor device with buried bit lines and method for fabricating the same
摘要 A semiconductor device includes: a semiconductor substrate configured to include a plurality of trenches therein; a plurality of buried bit lines each configured to fill a portion of each trench; a plurality of active pillars each formed in an upper portion of each buried bit line; a plurality of vertical gates each configured to surround each active pillar; and a plurality of word lines configured to couple neighboring vertical gates with each other.
申请公布号 US8344450(B2) 申请公布日期 2013.01.01
申请号 US201213541213 申请日期 2012.07.03
申请人 HYNIX SEMICONDUCTOR INC.;KIM SU-YOUNG 发明人 KIM SU-YOUNG
分类号 H01L29/94 主分类号 H01L29/94
代理机构 代理人
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