发明名称 Method for fracturing and forming a pattern using curvilinear characters with charged particle beam lithography
摘要 In the field of semiconductor production using shaped charged particle beam lithography, a method and system for fracturing or mask data preparation or proximity effect correction is disclosed, wherein a series of curvilinear character projection shots are determined for a charged particle beam writer system, such that the set of shots can form a continuous track, possibly of varying width, on a surface. In some embodiments, characteristics of the continuous track will be within a predetermined tolerance.
申请公布号 US8343695(B2) 申请公布日期 2013.01.01
申请号 US201113269497 申请日期 2011.10.07
申请人 D2S, INC.;FUJIMURA AKIRA;TUCKER MICHAEL 发明人 FUJIMURA AKIRA;TUCKER MICHAEL
分类号 G03F1/20;G03F9/00 主分类号 G03F1/20
代理机构 代理人
主权项
地址