发明名称 |
Semiconductor device having ferroelectric capacitor |
摘要 |
The present invention provides a method for manufacturing a semiconductor device, including the steps of: forming a first ferroelectric film on a first conductive film by a film-forming method including at least a step of forming a film by a sol-gel method; forming a second ferroelectric film on the first ferroelectric film by a sputtering method; forming a second conductive film on the second ferroelectric film; and forming a capacitor provided with a lower electrode, a capacitor dielectric film and an upper electrode by patterning the first conductive film, the first and second ferroelectric films and the second conductive film.
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申请公布号 |
US8344434(B2) |
申请公布日期 |
2013.01.01 |
申请号 |
US201113100511 |
申请日期 |
2011.05.04 |
申请人 |
FUJITSU SEMICONDUCTOR LIMITED;WANG WENSHENG;HORII YOSHIMASA |
发明人 |
WANG WENSHENG;HORII YOSHIMASA |
分类号 |
H01L21/02;H01L21/00;H01L21/8242;H01L27/108;H01L29/94 |
主分类号 |
H01L21/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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