发明名称 |
Phase change device with offset contact |
摘要 |
A programmable resistance memory combines multiple cells into a block that includes one or more shared electrodes. The shared electrode configuration provides additional thermal isolation for the active region of each memory cell, thereby reducing the current required to program each memory cell.
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申请公布号 |
US8344350(B2) |
申请公布日期 |
2013.01.01 |
申请号 |
US201113093109 |
申请日期 |
2011.04.25 |
申请人 |
OVONYX, INC.;CZUBATYJ WOLODYMYR;LOWREY TYLER |
发明人 |
CZUBATYJ WOLODYMYR;LOWREY TYLER |
分类号 |
H01L21/06;H01L45/00 |
主分类号 |
H01L21/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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