发明名称 |
Semiconductor material, method of making the same, and semiconductor device |
摘要 |
A semiconductor material is provided comprising: a composition graded layer, formed on a Si substrate or an interlayer formed thereon, comprising a composition of AlXGa1-XN graded such that a content ratio of Al in the composition decreases continuously or discontinuously in a crystal growing direction; a superlattice composite layer, formed on the composition graded layer, comprising a high Al-containing layer comprising a composition of AlYGa1-YN and a low Al-containing layer comprising a composition of AlZGa1-ZN that are laminated alternately; and a nitride semiconductor layer formed on the superlattice composite layer.
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申请公布号 |
US8344356(B2) |
申请公布日期 |
2013.01.01 |
申请号 |
US20080735259 |
申请日期 |
2008.12.17 |
申请人 |
DOWA ELECTRONICS MATERIALS CO., LTD.;NATIONAL UNIVERSITY CORPORATION NAGOYA INSTITUTE OF TECHNOLOGY;SAKAMOTO RYO;SHIMIZU JO;ITO TSUNEO;EGAWA TAKASHI |
发明人 |
SAKAMOTO RYO;SHIMIZU JO;ITO TSUNEO;EGAWA TAKASHI |
分类号 |
H01L0296/000006 |
主分类号 |
H01L0296/000006 |
代理机构 |
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代理人 |
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地址 |
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