发明名称 |
Implementing multiple different types of dies for memory stacking |
摘要 |
A method and structure are provided for implementing multiple different types of dies for memory stacking. A common wafer is provided with a predefined reticle type. The reticle type includes a plurality of arrays, and a plurality of periphery segments. A plurality of through-silicon-vias (TSVs) is placed at boundaries between array and periphery segments. Multiple different types of dies for memory stacking are obtained based upon selected scribing of the dies from the common wafer.
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申请公布号 |
US8343804(B2) |
申请公布日期 |
2013.01.01 |
申请号 |
US201213364346 |
申请日期 |
2012.02.02 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION;COTEUS PAUL W.;KIM KYU-HYOUN |
发明人 |
COTEUS PAUL W.;KIM KYU-HYOUN |
分类号 |
H01L21/00 |
主分类号 |
H01L21/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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