发明名称 |
Method and structure for dividing a substrate into individual devices |
摘要 |
A method for obtaining individual dies from a semiconductor structure is disclosed. The semiconductor structure includes a device layer, and the device layer in turn includes active regions separated by predefined spacings. Thick metal is selectively formed on backside of the device layer such that thick metal is formed on backside of active regions but not on backside of the predefined spacings. The semiconductor structure is then cut along the predefined spacings to separate the active regions with thick metal on their backside into individual dies.
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申请公布号 |
US8343852(B2) |
申请公布日期 |
2013.01.01 |
申请号 |
US201113095584 |
申请日期 |
2011.04.27 |
申请人 |
FAIRCHILD SEMICONDUCTOR CORPORATION;LI MINHUA;WANG QI;SIM GORDON;REYNOLDS MATTHEW;KIM SUKU;MURPHY JAMES J.;YILMAZ HAMZA |
发明人 |
LI MINHUA;WANG QI;SIM GORDON;REYNOLDS MATTHEW;KIM SUKU;MURPHY JAMES J.;YILMAZ HAMZA |
分类号 |
H01L21/00 |
主分类号 |
H01L21/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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