发明名称 |
Solid-state image sensing device containing electron multiplication function |
摘要 |
A solid state imaging device with an electron multiplying function includes an imaging region VR formed of a plurality of vertical shift registers, a horizontal shift register HR that transfers electrons from the imaging region VR, a multiplication register EM that multiplies the electrons from the horizontal shift register HR, and an electron injecting electrode 11A provided at an end portion of a starting side of the imaging region VR in an electron transfer direction. A specific vertical shift register (channel CH1) into which the electrons are injected by the electron injecting electrode 11A is disposed in a thick part of a semiconductor substrate, and is set in such a way as to be blocked from incident light.
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申请公布号 |
US8345135(B2) |
申请公布日期 |
2013.01.01 |
申请号 |
US20100920131 |
申请日期 |
2010.01.27 |
申请人 |
HAMAMATSU PHOTONICS K.K.;SUZUKI HISANORI;YONETA YASUHITO;TAKAGI SHIN-ICHIRO;MAETA KENTARO;MURAMATSU MASAHARU |
发明人 |
SUZUKI HISANORI;YONETA YASUHITO;TAKAGI SHIN-ICHIRO;MAETA KENTARO;MURAMATSU MASAHARU |
分类号 |
H04N3/14;H01L27/148;H04N5/335;H04N5/341;H04N5/369;H04N5/3725;H04N5/3728;H04N5/374 |
主分类号 |
H04N3/14 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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