发明名称 |
Metal gate transistors with raised source and drain regions formed on heavily doped substrate |
摘要 |
An MOS transistor formed on a heavily doped substrate is described. Metal gates are used in low temperature processing to prevent doping from the substrate from diffusing into the channel region of the transistor.
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申请公布号 |
US8344452(B2) |
申请公布日期 |
2013.01.01 |
申请号 |
US20080011439 |
申请日期 |
2008.01.24 |
申请人 |
INTEL CORPORATION;LINDERT NICK;BRASK JUSTIN K.;WESTMEYER ANDREW |
发明人 |
LINDERT NICK;BRASK JUSTIN K.;WESTMEYER ANDREW |
分类号 |
H01L29/78 |
主分类号 |
H01L29/78 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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