Silicon wafer and method of manufacturing the same

摘要

A silicon wafer in which both occurrences of slip dislocation and warpage are suppressed in device manufacturing processes is a silicon wafer having BMDs having an octahedral shape, wherein BMDs located at a position below the silicon wafer surface to a depth of 20 μm and having a diagonal length of 200 nm or more are present at a concentration of ≦̸2×109/cm3, and BMDs located at a position below a depth ≧50 μm have a diagonal length of ≧10 nm to ≦̸50 nm and a concentration of ≧1×1012/cm3.