发明名称 |
Buildup dielectric layer having metallization pattern semiconductor package fabrication method |
摘要 |
A method of manufacturing a semiconductor package includes mounting and electrically connecting a semiconductor die to a substrate. The semiconductor die and the substrate are encapsulated to form an encapsulation. Via holes are laser-ablated through the encapsulation and conductive material is deposited within the via holes to form vias. A first buildup dielectric layer is formed on the encapsulation. Laser-ablated artifacts are laser-ablated in the first buildup layer. The laser-ablated artifacts in the first buildup layer are filled with a first metal layer to form a first electrically conductive pattern in the first build up layer. The operations of forming a buildup layer, forming laser-ablated artifacts in the buildup layer, and filling the laser-ablated artifacts with an electrically conductive material to form an electrically conductive pattern can be performed any one of a number of times to achieve the desired redistribution.
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申请公布号 |
US8341835(B1) |
申请公布日期 |
2013.01.01 |
申请号 |
US20090387691 |
申请日期 |
2009.05.05 |
申请人 |
AMKOR TECHNOLOGY, INC.;HUEMOELLER RONALD PATRICK;RUSLI SUKIANTO;HINER DAVID JON |
发明人 |
HUEMOELLER RONALD PATRICK;RUSLI SUKIANTO;HINER DAVID JON |
分类号 |
H05K3/30 |
主分类号 |
H05K3/30 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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