发明名称 |
Semiconductor device and method of forming Fo-WLCSP having conductive layers and conductive vias separated by polymer layers |
摘要 |
A Fo-WLCSP has a first polymer layer formed around a semiconductor die. First conductive vias are formed through the first polymer layer around a perimeter of the semiconductor die. A first interconnect structure is formed over a first surface of the first polymer layer and electrically connected to the first conductive vias. The first interconnect structure has a second polymer layer and a plurality of second vias formed through the second polymer layer. A second interconnect structure is formed over a second surface of the first polymer layer and electrically connected to the first conductive vias. The second interconnect structure has a third polymer layer and a plurality of third vias formed through the third polymer layer. A semiconductor package can be mounted to the WLCSP in a PoP arrangement. The semiconductor package is electrically connected to the WLCSP through the first interconnect structure or second interconnect structure.
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申请公布号 |
US8343810(B2) |
申请公布日期 |
2013.01.01 |
申请号 |
US20100857362 |
申请日期 |
2010.08.16 |
申请人 |
STATS CHIPPAC, LTD.;OH JIHOON;LEE SINJAE;KIM JINGWAN |
发明人 |
OH JIHOON;LEE SINJAE;KIM JINGWAN |
分类号 |
H01L21/50 |
主分类号 |
H01L21/50 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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