发明名称 Method of determining defects in a substrate and apparatus for exposing a substrate in a lithographic process
摘要 Method of determining defects in a substrate, the method comprising: scanning a scan range of the substrate with a sensor, the sensor projecting a beam of radiation on the substrate; measuring the fraction of the intensity of the radiation reflected from different substrate areas along the scan range; determining the variations of the measured fraction across the scan range; determining from the variations whether any defects are present in the substrate.
申请公布号 US8345231(B2) 申请公布日期 2013.01.01
申请号 US20090470848 申请日期 2009.05.22
申请人 ASML NETHERLANDS B.V.;SAHA NILAY;PEN HERMEN FOLKEN 发明人 SAHA NILAY;PEN HERMEN FOLKEN
分类号 G01N21/00 主分类号 G01N21/00
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