发明名称 |
Method of determining defects in a substrate and apparatus for exposing a substrate in a lithographic process |
摘要 |
Method of determining defects in a substrate, the method comprising: scanning a scan range of the substrate with a sensor, the sensor projecting a beam of radiation on the substrate; measuring the fraction of the intensity of the radiation reflected from different substrate areas along the scan range; determining the variations of the measured fraction across the scan range; determining from the variations whether any defects are present in the substrate.
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申请公布号 |
US8345231(B2) |
申请公布日期 |
2013.01.01 |
申请号 |
US20090470848 |
申请日期 |
2009.05.22 |
申请人 |
ASML NETHERLANDS B.V.;SAHA NILAY;PEN HERMEN FOLKEN |
发明人 |
SAHA NILAY;PEN HERMEN FOLKEN |
分类号 |
G01N21/00 |
主分类号 |
G01N21/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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