| 摘要 |
A CMOS (Complementary Metal-Oxide Semiconductor) image sensor is provided. A CMOS image sensor includes a first light-receiving unit converting light into charge, a first floating diffusion region, in which a first potential corresponding to the converted amount of charge is generated and a second floating diffusion region, to which the charge in the first floating diffusion region is transmitted, and in which a second potential is generated, wherein a wide dynamic range signal is acquired from the first floating diffusion region, a high-sensitively signal is acquired from the second floating diffusion region, and the acquired signals are synthesized and output.
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