发明名称 |
Insulated-gate semiconductor device with protection diode |
摘要 |
Channel regions continuous with transistor cells are disposed also below a gate pad electrode. The channel region below the gate pad electrode is fixed to a source potential. Thus, a predetermined reverse breakdown voltage between a drain and a source is secured without forming a p+ type impurity region below the entire lower surface of the gate pad electrode. Furthermore, a protection diode is formed in a conductive layer disposed at the outer periphery of an operation region.
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申请公布号 |
US8344457(B2) |
申请公布日期 |
2013.01.01 |
申请号 |
US20100711647 |
申请日期 |
2010.02.24 |
申请人 |
SANYO SEMICONDUCTOR CO., LTD.;SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC;NOGUCHI YASUNARI;ONODERA EIO;ISHIDA HIROYASU |
发明人 |
NOGUCHI YASUNARI;ONODERA EIO;ISHIDA HIROYASU |
分类号 |
H01L23/62;H01L29/66 |
主分类号 |
H01L23/62 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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