A semiconductor component is disclosed. One embodiment provides a semiconductor body having a cell region with at least one zone of a first conduction type and at least one zone of a second conduction type in a rear side. A drift zone of the first conduction type in the cell region is provided. The drift zone contains at least one region through which charge carriers flow in an operating mode of the semiconductor component in one polarity and charge carriers do not flow in an operating mode of the semiconductor component in an opposite polarity.
申请公布号
US8344415(B2)
申请公布日期
2013.01.01
申请号
US20070924115
申请日期
2007.10.25
申请人
INFINEON TECHNOLOGIES AUSTRIA AG;RUETHING HOLGER;PFIRSCH FRANK;WILLMEROTH ARMIN;HILLE FRANK;SCHULZE HANS-JOACHIM