发明名称 |
Method fabricating phase-change semiconductor memory device |
摘要 |
A method of fabricating a phase change memory having a unit memory cell is described. The unit memory cell includes a phase change element connected to a corresponding vertical cell diode. The phase change element is formed from a phase change material layer formed on an interlayer dielectric layer including a via hole, and etched using a plasma formed from a plasma gas having a molecular weight of 17 or less to form a respective phase change material pattern in the via hole.
|
申请公布号 |
US8343798(B2) |
申请公布日期 |
2013.01.01 |
申请号 |
US201113084654 |
申请日期 |
2011.04.12 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD.;CHOI BYOUNG-DEOG;BAE BYOUNG-JAE;PARK JEONG-HEE |
发明人 |
CHOI BYOUNG-DEOG;BAE BYOUNG-JAE;PARK JEONG-HEE |
分类号 |
H01L21/06 |
主分类号 |
H01L21/06 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|