| 摘要 |
A gallium formulated ink is provided. Also provided are methods of preparing the gallium formulated ink and for using the gallium formulated ink to deposit a Group 1b/gallium/(optional indium)/Group 6a material on a substrate for use in the manufacture of a variety of chalcogenide containing semiconductor materials, such as, thin film transistors (TFTs), light emitting diodes (LEDs); and photoresponsive devices (e.g., electrophotography (e.g., laser printers and copiers), rectifiers, photographic exposure meters and photovoltaic cells) and chalcogenide containing phase change memory materials.
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