发明名称 |
Method for forming isolation layer of semiconductor device |
摘要 |
A method for fabricating a semiconductor device includes forming an isolation layer which defines an active region in a substrate, forming recess patterns in the active region and the isolation layer, baking a surface of the recess pattern by conducting an annealing process and forming a gate dielectric layer over a surface of the recess pattern by conducting an oxidation process.
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申请公布号 |
US8343879(B2) |
申请公布日期 |
2013.01.01 |
申请号 |
US20100825592 |
申请日期 |
2010.06.29 |
申请人 |
HYNIX SEMICONDUCTOR INC.;JANG SE-AUG;KIM EUN-JEONG;LEE EUN-HA |
发明人 |
JANG SE-AUG;KIM EUN-JEONG;LEE EUN-HA |
分类号 |
H01L21/31 |
主分类号 |
H01L21/31 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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