发明名称 Semiconductor structure comprising pillar and moisture barrier
摘要 A semiconductor structure includes multiple semiconductor devices on a substrate and a metal layer disposed over the semiconductor devices, the metal layer comprising at least a first trace and a second trace. A conductive pillar is disposed directly on and in electrical contact with the first trace of the metal layer, and a dielectric layer is selectively disposed between the metal layer and the conductive pillar, where the dielectric layer electrically isolates the second trace from the pillar. A moisture barrier surrounds the semiconductor devices around a periphery of the semiconductor structure, and extends from the substrate through the dielectric layer to the conductive pillar.
申请公布号 US8344504(B2) 申请公布日期 2013.01.01
申请号 US201113075493 申请日期 2011.03.30
申请人 AVAGO TECHNOLOGIES WIRELESS IP (SINGAPORE) PTE. LTD.;WHOLEY JAMES;PARKHURST RAY 发明人 WHOLEY JAMES;PARKHURST RAY
分类号 H01L23/04;H01L23/52 主分类号 H01L23/04
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