| 发明名称 |
Gallium nitride material processing and related device structures |
| 摘要 |
Gallium nitride material devices and related processes are described. In some embodiments, an N-face of the gallium nitride material region is exposed by removing an underlying region.
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| 申请公布号 |
US8343824(B2) |
申请公布日期 |
2013.01.01 |
| 申请号 |
US20080143727 |
申请日期 |
2008.06.20 |
| 申请人 |
INTERNATIONAL RECTIFIER CORPORATION;PINER EDWIN LANIER;JOHNSON JERRY WAYNE;ROBERTS JOHN CLAASSEN |
发明人 |
PINER EDWIN LANIER;JOHNSON JERRY WAYNE;ROBERTS JOHN CLAASSEN |
| 分类号 |
H01L21/337;H01L21/00;H01L29/12;H01L29/20;H01L33/00 |
主分类号 |
H01L21/337 |
| 代理机构 |
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代理人 |
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