发明名称 |
Photoelectric device using PN diode and silicon integrated circuit (IC) including the photoelectric device |
摘要 |
Provided are a photoelectric device using a PN diode and a silicon integrated circuit (IC) including the photoelectric device. The photoelectric device includes: a substrate; and an optical waveguide formed as a PN diode on the substrate, wherein a junction interface of the PN diode is formed in a direction in which light advances; and an electrode applying a reverse voltage to the PN diode, wherein N-type and P-type semiconductors of the PN diode are doped at high concentrations and the doping concentration of the N-type semiconductor is higher than or equal to that of the P-type semiconductor.
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申请公布号 |
US8346026(B2) |
申请公布日期 |
2013.01.01 |
申请号 |
US20070517802 |
申请日期 |
2007.08.07 |
申请人 |
ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE;PARK JEONG-WOO;KIM GYUNGOCK;LEEM YOUNG-AHN;KIM HYUN-SOO;MHEEN BONGKI |
发明人 |
PARK JEONG-WOO;KIM GYUNGOCK;LEEM YOUNG-AHN;KIM HYUN-SOO;MHEEN BONGKI |
分类号 |
G02F1/035;G02B6/00;G02B6/12 |
主分类号 |
G02F1/035 |
代理机构 |
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代理人 |
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地址 |
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