发明名称 |
Nitride semiconductor device and method for fabricating the same |
摘要 |
A nitride semiconductor device includes: a first nitride semiconductor layer; a second nitride semiconductor layer formed on the first nitride semiconductor layer and having a wider band gap than the first nitride semiconductor layer; and a third nitride semiconductor layer formed on the second nitride semiconductor layer. A region of the third nitride semiconductor layer located below the gate electrode is formed with a control region having a p-type conductivity, and a region of the third nitride semiconductor layer located between the gate electrode and each of the source electrode and the drain electrode is formed with a high resistive region having a higher resistance than the that of the control region.
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申请公布号 |
US8344423(B2) |
申请公布日期 |
2013.01.01 |
申请号 |
US201213360275 |
申请日期 |
2012.01.27 |
申请人 |
PANASONIC CORPORATION;UEMOTO YASUHIRO;HIKITA MASAHIRO;UEDA TETSUZO;TANAKA TSUYOSHI;UEDA DAISUKE |
发明人 |
UEMOTO YASUHIRO;HIKITA MASAHIRO;UEDA TETSUZO;TANAKA TSUYOSHI;UEDA DAISUKE |
分类号 |
H01L29/66 |
主分类号 |
H01L29/66 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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