Semiconductor light emitting device

摘要

A semiconductor light emitting device with which a driving voltage is able to be kept low is provided. The semiconductor light emitting device includes: an n-type cladding layer; an active layer; a p-type cladding layer containing AlGaInP; an intermediate layer; and a contact layer containing GaP in this order, wherein the intermediate layer contains Ga1-aInaP (0.357≦̸a≦̸0.408), and has a thickness of from 10 nm to 20 nm both inclusive.