发明名称 Magnetoresistive effect element in CPP-type structure and magnetic disk device
摘要 An MR element according to the present invention has the superior effects that further improve an MR ratio because a structure of a spacer layer 40 is configured of a certain three-layer structure with certain materials, and at least one of a first ferromagnetic layer 30 and a second ferromagnetic layer 50 contains a certain amount of an element selected from the group of nitrogen (N), carbon (C), and oxygen (O).
申请公布号 US8345390(B2) 申请公布日期 2013.01.01
申请号 US20090379625 申请日期 2009.02.26
申请人 TDK CORPORATION;TSUCHIYA YOSHIHIRO;HARA SHINJI;CHOU TSUTOMU;MATSUZAWA HIRONOBU 发明人 TSUCHIYA YOSHIHIRO;HARA SHINJI;CHOU TSUTOMU;MATSUZAWA HIRONOBU
分类号 G11B5/39 主分类号 G11B5/39
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