Driving method of variable resistance element, initialization method of variable resistance element, and nonvolatile storage device

摘要

A method of driving a variable resistance element includes: a writing step performed by applying a writing voltage pulse having a first polarity to a variable resistance layer to change a resistance state of the layer from high to low; and an erasing step performed by applying an erasing voltage pulse having a second polarity to the layer to change the state from low to high. Here, |Vw1|>|Vw2| where Vw1 represents a voltage value of the writing voltage pulse for first to N-th writing steps (N≧1) and Vw2 represents a voltage value of the writing voltage pulse for (N+1)-th and subsequent writing steps, and |Ve1|>|Ve2| where Ve1 represents a voltage value of the erasing voltage pulse for first to M-th erasing steps (M≧1) and Ve2 represents a voltage value of the erasing voltage pulse for (M+1)-th and subsequent erasing steps. The (N+1)-th writing step follows the M-th erasing step.