发明名称 Fabricating a graphene nano-device
摘要 Nanoscale graphene structure fabrication techniques are provided. An oxide nanowire useful as a mask is formed on a graphene layer and then ion beam etching is performed. A nanoscale graphene structure is fabricated by removing a remaining oxide nanowire after the ion beam etching.
申请公布号 US8343366(B2) 申请公布日期 2013.01.01
申请号 US20080211006 申请日期 2008.09.15
申请人 SNU R&DB FOUNDATION;HONG SEUNGHUN;LEE JOOHYUNG;KIM TAE HYUN 发明人 HONG SEUNGHUN;LEE JOOHYUNG;KIM TAE HYUN
分类号 B44C1/22 主分类号 B44C1/22
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