发明名称 |
Fabricating a graphene nano-device |
摘要 |
Nanoscale graphene structure fabrication techniques are provided. An oxide nanowire useful as a mask is formed on a graphene layer and then ion beam etching is performed. A nanoscale graphene structure is fabricated by removing a remaining oxide nanowire after the ion beam etching.
|
申请公布号 |
US8343366(B2) |
申请公布日期 |
2013.01.01 |
申请号 |
US20080211006 |
申请日期 |
2008.09.15 |
申请人 |
SNU R&DB FOUNDATION;HONG SEUNGHUN;LEE JOOHYUNG;KIM TAE HYUN |
发明人 |
HONG SEUNGHUN;LEE JOOHYUNG;KIM TAE HYUN |
分类号 |
B44C1/22 |
主分类号 |
B44C1/22 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|