| 摘要 |
<p>PURPOSE: A phase change memory device and a manufacturing method thereof are provided to increase the number of cell strings by reducing the resistance of a word line without a word line contact. CONSTITUTION: A phase change memory device(300) includes a semiconductor substrate, a junction word line(321), an epitaxial word line(322), and a switching device. The junction word line is formed on the upper side of the semiconductor. The epitaxial word line is formed on the upper side of the junction word line. The switching device is formed on the upper side of the epitaxial word line.</p> |
