METHOD FOR FORMING PATTERN OF METAL OXIDE AND METHOD FOR MANUFACTURING THIN FILM TRANSISTOR USING THE SAME

摘要

PURPOSE: A method for forming a metal oxide pattern and a method for manufacturing a thin film transistor are provided to minimize damage to a substrate by sintering metal oxide ink using a white light short pulse under the atmosphere for milliseconds. CONSTITUTION: An ink composition including a metal oxide precursor or metal oxide nanoparticle and solvents is prepared. A pattern is formed on a substrate by discharging the ink composition on the substrate. The formed pattern is optically sintered. The metal oxide precursor has an ion form.