NON-VOLATILE MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME

摘要

PURPOSE: A nonvolatile memory device and a manufacturing method thereof are provided to reduce parasitic capacitance by forming an air gap between active regions. CONSTITUTION: A trench is formed on a device isolation region of a substrate. A device isolation film pattern(108a) fills a part of the trench. A cell thin film structure is formed by successively laminating a tunnel insulation layer(110), a trap insulation layer(112), and a blocking dielectric layer(114) on the substrate. One of the tunnel insulation layer, the trap insulation layer, and the blocking dielectric layer covers and crosses an air gap to form the air gap on the device isolation film pattern. A control gate electrode(118) is formed on the cell thin film structure.