NON-VOLATILE MEMORY DEVICE AND READ METHOD THEREOF

摘要

PURPOSE: A nonvolatile memory device and a reading method thereof are provided to improve a reading speed by sensing memory cells selected according to a full page read mode and a partial page read mode with a different method. CONSTITUTION: A cell array(110) is connected to a plurality of bit lines with an ABL(all bit line) structure. A page buffer circuit(130) is respectively connected to the plurality of bit lines. A control logic unit(150) controls a page buffer circuit to sense memory cells corresponding to odd and even columns among the memory cells of a selection page in a second read mode and memory cells corresponding to odd and even columns of the selection page in a first read mode. One data is identified by performing two sensing operations in the first read mode. One data is identified by performing one sensing operation in the second read mode.