发明名称 METHOD FOR PULLING A SILICON SINGLE CRYSTAL
摘要 9 Abstract Method for Pulling a Silicon Single CrystalThe invention relates to a method for pulling a silicon single crystal from a melt which is contained in a crucible, comprisingimmersion of a seed crystal into the melt;crystallization of the single crystal on the seed crystal by raising the seed crystal from the melt with a crystal pull speed;widening the diameter of the single crystal to a setpoint diameter in a conical section, comprisingcontrol of the crystal pull speed in such a way as to induce a 15 curvature inversion of a growth front of the single crystal in the conical section. Fig. 1
申请公布号 SG185993(A1) 申请公布日期 2012.12.28
申请号 SG20120083457 申请日期 2010.03.25
申请人 SILTRONIC AG 发明人 MARKUS BAER
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