| 摘要 |
<p>PURPOSE: A semiconductor device, a manufacturing method thereof, a display device, and an electronic device are provided to improve reliability by reducing wire resistance and suppressing contact resistance. CONSTITUTION: A thin film transistor is formed by successively laminating a gate electrode(12), a gate insulation layer(13), an organic semiconductor layer(14), a pair of source and drain electrodes(15A,15B), a protection layer, and a pair of wiring layers(17A,17B). An electrode is arranged on the organic semiconductor layer in contact with the organic semiconductor layer. A wiring layer is formed independently of the electrode and is electrically connected to the electrode.</p> |
