PROCÉDÉ POUR RÉALISER UN GUIDE OPTIQUE A FENTE SUR SILICIUM

摘要

The method involves depositing a thin single-crystal silicon layer on a silicon substrate (10) covered with an insulating buried layer (12), and uniformly depositing a semi-insulating or insulating layer on a silicon layer. Local thermal oxidation is performed in depth of the silicon layer, before uniform deposition of the semi-insulating or insulating layer, for forming an insulating oxidized band extending along a path of a semi-insulating or insulating vertical wall under and on both sides of the wall on entire length of the path, such that the wall is not adjacent to the silicon layer.