GAN SUBSTRATE AND MANUFACTURE METHOD THE SAME

摘要

PURPOSE: A GaN substrate and a manufacturing method thereof are provided to automatically separate a second GaN layer from a base substrate by growing a first GaN layer which induces a crack in a cooling process. CONSTITUTION: A base substrate(210) is prepared(S210). A first GaN layer(220) is grown on the base substrate(S220). A buffer layer(230) is grown on the first GaN layer(S230). A second GaN layer(240) is grown on the buffer layer(S240).