MOSFET AND MANUFACTURING METHOD THEREOF

摘要

Provided are an MOSFET and a manufacturing method thereof. The MOSFET comprises an SOI chip formed of a semiconductor substrate (11), an insulating layer (12) and a semiconductor layer (13); gate stack layers (15, 22) located on the semiconductor layer (13), a source region and a drain region located at two sides of the gate stack, a channel region located in the semiconductor layer (13) and sandwiched between the source region and the drain region, and a back gate (17) located in the semiconductor substrate (11). The back gate comprises a first to a third compensation injection regions. The first compensation injection region is located below the source region and the drain region, the second compensation injection region extends along a direction leaving the channel region and is adjacent to the first compensation injection region, and the third compensation injection region is located below the channel region and is adjacent to the first compensation injection region. The structure implements adjustment on the threshold voltage by changing the doping type of the back gate, and may reduce the parasitic capacitance and contact resistance related to the back gate.